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T5921 85000 4LCX1 CN1H4NT 120608 1SMC5365 AX111 ES2GA
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  Datasheet File OCR Text:
 SMD Type
Silicon Epitaxial Planar Diode 1SV269
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
+0.05 0.3-0.05
+0.05 0.85-0.05
Features
High Capacitance Ratio:C2V/C25V = 11.5(Typ.) Low Series Resistance:rs = 0.55 (Typ.)
0.475 0.375
+0.1 2.6-0.1
1.0max
Excellent C-V Characteristics,and Small Tracking Error.
Absolute Maximum Ratings Ta = 25
Parameter Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range Symbol VR VRM Tj Tstg Value 34 36(RL = 10 K 125 -55 to +125 ) Unit V V
Electrical C haracteristics T a = 25
P aram eter R everse V oltage R everse C urrent C apacitance S ym bol VR IR C 2V C 25V C apacitance R atio S eries R esistance N ote : A vailable in m atched group for capacitance to 2.0% . C (M ax.)-C (M in.) C (M in.) (V R =2~25V ) 0.020 C 2V/C 25V C 25V/C 28V rs V R = 5V , f = 470 M H z C onditions IR = 1 A M in 34 10 33 2.5 11 1.03 31.5 2.75 11.5 1.05 0.55 0.7 34 2.9 Typ M ax U nit V nA pF
V R = 32 V f = 1 M H z;V R = 2 V f = 1 M H z;V R = 25 V
Marking
Marking TE
+0.05 0.1-0.02
+0.1 1.3-0.1
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